Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate

	Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate
	Zhu, M ; Chen, P ; Fu, RKY ; An, ZH ; Lin, CL ; Chu, PK
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2004
卷号	51 期号:6 页码:901-906
关键词	FILM RESISTANCE INSULATOR
ISSN号	0018-9383
通讯作者	Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
学科主题	Engineering, Electrical & Electronic; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95368]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhu, M,Chen, P,Fu, RKY,et al. Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2004,51(6):901-906.
APA	Zhu, M,Chen, P,Fu, RKY,An, ZH,Lin, CL,&Chu, PK.(2004).Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate.IEEE TRANSACTIONS ON ELECTRON DEVICES,51(6),901-906.
MLA	Zhu, M,et al."Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate".IEEE TRANSACTIONS ON ELECTRON DEVICES 51.6(2004):901-906.