Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure

	Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure
	Di, ZF ; Zhang, M ; Liu, WL ; Zhu, M ; Lin, CL ; Chu, PK
刊名	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
	2005
卷号	124 页码:153-157
关键词	ELECTRON-MOBILITY ENHANCEMENT FIELD-EFFECT TRANSISTORS STRAINED-SI LAYER TRANSFER N-MOSFETS GERMANIUM STABILITY SUBSTRATE EPITAXY ALLOYS
ISSN号	0921-5107
通讯作者	Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题	Materials Science, Multidisciplinary; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95341]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Di, ZF,Zhang, M,Liu, WL,et al. Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2005,124:153-157.
APA	Di, ZF,Zhang, M,Liu, WL,Zhu, M,Lin, CL,&Chu, PK.(2005).Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,124,153-157.
MLA	Di, ZF,et al."Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 124(2005):153-157.