Reversible resistance switching of GeTi thin film used for non-volatile memory

	Reversible resistance switching of GeTi thin film used for non-volatile memory
	Shen, J ; Xu, C ; Liu, B ; Song, ZT ; Wu, LC ; Feng, SL ; Chen, B
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
	2007
卷号	46 期号:1-3 页码:L1-L3
关键词	NEGATIVE RESISTANCE PHASE-CHANGE OXIDE-FILMS TRANSITION DEVICE
ISSN号	0021-4922
通讯作者	Shen, J, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95075]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Shen, J,Xu, C,Liu, B,et al. Reversible resistance switching of GeTi thin film used for non-volatile memory[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,2007,46(1-3):L1-L3.
APA	Shen, J.,Xu, C.,Liu, B.,Song, ZT.,Wu, LC.,...&Chen, B.(2007).Reversible resistance switching of GeTi thin film used for non-volatile memory.JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,46(1-3),L1-L3.
MLA	Shen, J,et al."Reversible resistance switching of GeTi thin film used for non-volatile memory".JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46.1-3(2007):L1-L3.