Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations

	Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations
	Zhang, YG(张永刚） ; Gu, Y ; Tian, ZB ; Li, AZ ; Zhu, XR ; Zheng, YL
刊名	INFRARED PHYSICS & TECHNOLOGY
	2008
卷号	51 期号:4 页码:316-321
关键词	VAPOR-PHASE EPITAXY GAS-SOURCE MBE DARK CURRENT PHOTODETECTORS DETECTORS MOCVD
ISSN号	1350-4495
通讯作者	Zhang, YG, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Instruments & Instrumentation; Optics; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94962]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, YG,Gu, Y,Tian, ZB,et al. Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations[J]. INFRARED PHYSICS & TECHNOLOGY,2008,51(4):316-321.
APA	Zhang, YG,Gu, Y,Tian, ZB,Li, AZ,Zhu, XR,&Zheng, YL.(2008).Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations.INFRARED PHYSICS & TECHNOLOGY,51(4),316-321.
MLA	Zhang, YG,et al."Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations".INFRARED PHYSICS & TECHNOLOGY 51.4(2008):316-321.