Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers

	Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers
	Zhang, T ; Song, ZT ; Gong, YF ; Lin, Y ; Xu, C ; Chen, YF ; Liu, B ; Feng, SL
刊名	APPLIED PHYSICS LETTERS
	2008
卷号	92 期号:11 页码:113503-113503
关键词	RANDOM-ACCESS MEMORY
ISSN号	0003-6951
通讯作者	Zhang, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nantechnol, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94956]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, T,Song, ZT,Gong, YF,et al. Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers[J]. APPLIED PHYSICS LETTERS,2008,92(11):113503-113503.
APA	Zhang, T.,Song, ZT.,Gong, YF.,Lin, Y.,Xu, C.,...&Feng, SL.(2008).Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers.APPLIED PHYSICS LETTERS,92(11),113503-113503.
MLA	Zhang, T,et al."Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers".APPLIED PHYSICS LETTERS 92.11(2008):113503-113503.