Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers
Zhang, T ; Song, ZT ; Gong, YF ; Lin, Y ; Xu, C ; Chen, YF ; Liu, B ; Feng, SL
刊名APPLIED PHYSICS LETTERS
2008
卷号92期号:11页码:113503-113503
关键词RANDOM-ACCESS MEMORY
ISSN号0003-6951
通讯作者Zhang, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nantechnol, Shanghai 200050, Peoples R China
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/94956]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhang, T,Song, ZT,Gong, YF,et al. Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers[J]. APPLIED PHYSICS LETTERS,2008,92(11):113503-113503.
APA Zhang, T.,Song, ZT.,Gong, YF.,Lin, Y.,Xu, C.,...&Feng, SL.(2008).Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers.APPLIED PHYSICS LETTERS,92(11),113503-113503.
MLA Zhang, T,et al."Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers".APPLIED PHYSICS LETTERS 92.11(2008):113503-113503.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace