FORMATION OF COVALENT SOLID CNX COMPOUNDS BY HIGH-DOSE NITROGEN IMPLANTATION INTO CARBON THIN-FILMS

	FORMATION OF COVALENT SOLID CNX COMPOUNDS BY HIGH-DOSE NITROGEN IMPLANTATION INTO CARBON THIN-FILMS
	XIN,HP ; XU,WP ; SHI,XH ; ZHU,H ; LIN,CL ; Zou,SC
刊名	APPLIED PHYSICS LETTERS
	1995
卷号	66 期号:24 页码:3290-3291
关键词	STRUCTURAL-PROPERTIES SILICON-NITRIDE ION-BEAMS SURFACES N+
ISSN号	0003-6951
通讯作者	XIN, HP, CHINESE ACAD SCI,SHANGHAI INST MET,FUNCT MAT INFORMAT NATL LAB,SHANGHAI 200050,PEOPLES R CHINA
学科主题	Physics ; Applied
收录类别	SCI
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98653]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	XIN,HP,XU,WP,SHI,XH,et al. FORMATION OF COVALENT SOLID CNX COMPOUNDS BY HIGH-DOSE NITROGEN IMPLANTATION INTO CARBON THIN-FILMS[J]. APPLIED PHYSICS LETTERS,1995,66(24):3290-3291.
APA	XIN,HP,XU,WP,SHI,XH,ZHU,H,LIN,CL,&Zou,SC.(1995).FORMATION OF COVALENT SOLID CNX COMPOUNDS BY HIGH-DOSE NITROGEN IMPLANTATION INTO CARBON THIN-FILMS.APPLIED PHYSICS LETTERS,66(24),3290-3291.
MLA	XIN,HP,et al."FORMATION OF COVALENT SOLID CNX COMPOUNDS BY HIGH-DOSE NITROGEN IMPLANTATION INTO CARBON THIN-FILMS".APPLIED PHYSICS LETTERS 66.24(1995):3290-3291.