THE HYDROGEN-RELATED DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN H-2 ATMOSPHERE

	THE HYDROGEN-RELATED DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN H-2 ATMOSPHERE
	SHI,TS ; BAI,GR ; QI,MW ; XIE,LM
刊名	PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
	1985
卷号	11 期号:4 页码:221-227
ISSN号	0146-3535
通讯作者	SHI, TS, CHINESE ACAD SCI,SHANGHAI INST MET,BEIJING,PEOPLES R CHINA
学科主题	Crystallography; Materials Science ; Characterization & Testing
收录类别	SCI
原文出处	http://www.sciencedirect.com/science/article/pii/0146353585900036
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98067]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	SHI,TS,BAI,GR,QI,MW,et al. THE HYDROGEN-RELATED DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN H-2 ATMOSPHERE[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS,1985,11(4):221-227.
APA	SHI,TS,BAI,GR,QI,MW,&XIE,LM.(1985).THE HYDROGEN-RELATED DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN H-2 ATMOSPHERE.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS,11(4),221-227.
MLA	SHI,TS,et al."THE HYDROGEN-RELATED DEFECT-IMPURITY COMPLEXES IN C-SI GROWN IN H-2 ATMOSPHERE".PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS 11.4(1985):221-227.