Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition

	Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition
	Yan, X ; Feng, F ; Zhang, J ; Wang, YL
刊名	PLASMA SCIENCE & TECHNOLOGY
	2009
卷号	11 期号:5 页码:569-575
关键词	A-SI-H THIN-FILMS ION-BOMBARDMENT LOW-TEMPERATURE SILANE PLASMA GROWTH PECVD DIFFUSION ROUGHNESS FREQUENCY
ISSN号	1009-0630
通讯作者	Feng, F, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Fluids & Plasmas
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94891]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Yan, X,Feng, F,Zhang, J,et al. Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition[J]. PLASMA SCIENCE & TECHNOLOGY,2009,11(5):569-575.
APA	Yan, X,Feng, F,Zhang, J,&Wang, YL.(2009).Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition.PLASMA SCIENCE & TECHNOLOGY,11(5),569-575.
MLA	Yan, X,et al."Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition".PLASMA SCIENCE & TECHNOLOGY 11.5(2009):569-575.