N+ plasma-assisted wafer bonding between silicon and chemical vapor deposition oxide at low temperature

	N+ plasma-assisted wafer bonding between silicon and chemical vapor deposition oxide at low temperature
	Ma, XB ; Liu, WL ; Chen, C ; Xu, JY ; Song, ZT ; Lin, CL
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2009
卷号	12 期号:4-5 页码:161-167
关键词	ON-INSULATOR MEMS
ISSN号	1369-8001
通讯作者	Liu, WL, Chinese Acad Sci, Nano Technol Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94851]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Ma, XB,Liu, WL,Chen, C,et al. N+ plasma-assisted wafer bonding between silicon and chemical vapor deposition oxide at low temperature[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2009,12(4-5):161-167.
APA	Ma, XB,Liu, WL,Chen, C,Xu, JY,Song, ZT,&Lin, CL.(2009).N+ plasma-assisted wafer bonding between silicon and chemical vapor deposition oxide at low temperature.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,12(4-5),161-167.
MLA	Ma, XB,et al."N+ plasma-assisted wafer bonding between silicon and chemical vapor deposition oxide at low temperature".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 12.4-5(2009):161-167.