Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well

	Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well
	Gao, KH ; Zhou, WZ ; Zhou, YM ; Yu, G ; Lin, T ; Guo, SL ; Chu, JH ; Dai, N ; Gu, Y ; Zhang, YG(张永刚） ; Austing, DG
刊名	APPLIED PHYSICS LETTERS
	2009
卷号	94 期号:15 页码:152107-152107
关键词	HETEROSTRUCTURE
ISSN号	0003-6951
通讯作者	Yu, G, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94828]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Gao, KH,Zhou, WZ,Zhou, YM,et al. Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well[J]. APPLIED PHYSICS LETTERS,2009,94(15):152107-152107.
APA	Gao, KH.,Zhou, WZ.,Zhou, YM.,Yu, G.,Lin, T.,...&Austing, DG.(2009).Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well.APPLIED PHYSICS LETTERS,94(15),152107-152107.
MLA	Gao, KH,et al."Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well".APPLIED PHYSICS LETTERS 94.15(2009):152107-152107.