Achieving Multiple Resistance States in Phase-Change Memory Cell
Wang, K ; Han, XD ; Zhang, Z ; Wu, LC ; Liu, B ; Song, ZT ; Feng, SL
刊名JAPANESE JOURNAL OF APPLIED PHYSICS
2009
卷号48期号:7页码:74501-74501
关键词TRANSITION
ISSN号0021-4922
通讯作者Wang, K, Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/94764]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Wang, K,Han, XD,Zhang, Z,et al. Achieving Multiple Resistance States in Phase-Change Memory Cell[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2009,48(7):74501-74501.
APA Wang, K.,Han, XD.,Zhang, Z.,Wu, LC.,Liu, B.,...&Feng, SL.(2009).Achieving Multiple Resistance States in Phase-Change Memory Cell.JAPANESE JOURNAL OF APPLIED PHYSICS,48(7),74501-74501.
MLA Wang, K,et al."Achieving Multiple Resistance States in Phase-Change Memory Cell".JAPANESE JOURNAL OF APPLIED PHYSICS 48.7(2009):74501-74501.
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