Germanium surface hydrophilicity and low-temperature Ge layer transfer by Ge-SiO2 bonding

	Germanium surface hydrophilicity and low-temperature Ge layer transfer by Ge-SiO2 bonding
	Ma, XB ; Liu, WL ; Du, XF ; Liu, XY ; Song, ZT ; Lin, CL ; Chu, PK
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2010
卷号	28 期号:4 页码:769-774
关键词	SILICON-ON-INSULATOR WAFER BORON ENERGY
ISSN号	1071-1023
通讯作者	Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题	Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94661]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Ma, XB,Liu, WL,Du, XF,et al. Germanium surface hydrophilicity and low-temperature Ge layer transfer by Ge-SiO2 bonding[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2010,28(4):769-774.
APA	Ma, XB.,Liu, WL.,Du, XF.,Liu, XY.,Song, ZT.,...&Chu, PK.(2010).Germanium surface hydrophilicity and low-temperature Ge layer transfer by Ge-SiO2 bonding.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,28(4),769-774.
MLA	Ma, XB,et al."Germanium surface hydrophilicity and low-temperature Ge layer transfer by Ge-SiO2 bonding".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 28.4(2010):769-774.