Performance improvement of phase change memory cell by using a cerium dioxide buffer layer

	Performance improvement of phase change memory cell by using a cerium dioxide buffer layer
	Shang, F ; Zhai, JW ; Song, S ; Song, ZT ; Wang, CZ
刊名	APPLIED PHYSICS LETTERS
	2010
卷号	96 期号:20 页码:203504-203504
关键词	RANDOM-ACCESS MEMORY THIN-FILMS CONDUCTIVITY TECHNOLOGY STORAGE
ISSN号	0003-6951
通讯作者	Shang, F, Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
学科主题	Physics ; Applied
收录类别	SCI
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94636]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Shang, F,Zhai, JW,Song, S,et al. Performance improvement of phase change memory cell by using a cerium dioxide buffer layer[J]. APPLIED PHYSICS LETTERS,2010,96(20):203504-203504.
APA	Shang, F,Zhai, JW,Song, S,Song, ZT,&Wang, CZ.(2010).Performance improvement of phase change memory cell by using a cerium dioxide buffer layer.APPLIED PHYSICS LETTERS,96(20),203504-203504.
MLA	Shang, F,et al."Performance improvement of phase change memory cell by using a cerium dioxide buffer layer".APPLIED PHYSICS LETTERS 96.20(2010):203504-203504.