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Improved light emission from n-ZnO/p-Si heterojunction with HfO2as an electron blocking layer
Zhu, Ziqiang; Wen, Jian; Li, Borui; Li, Songzhan; Song, Zengcai; Zhou, Kai; Lei, Hongwei; Mo, Xiaoming; Fang, Guojia; Chen, Zhao
刊名Journal of Luminescence
2017
卷号184
ISSN号0022-2313
DOI10.1016/j.jlumin.2016.12.033
URL标识查看原文
收录类别EI
语种英语
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3740899
专题武汉大学
推荐引用方式
GB/T 7714
Zhu, Ziqiang,Wen, Jian,Li, Borui,et al. Improved light emission from n-ZnO/p-Si heterojunction with HfO2as an electron blocking layer[J]. Journal of Luminescence,2017,184.
APA Zhu, Ziqiang.,Wen, Jian.,Li, Borui.,Li, Songzhan.,Song, Zengcai.,...&Chen, Zhao.(2017).Improved light emission from n-ZnO/p-Si heterojunction with HfO2as an electron blocking layer.Journal of Luminescence,184.
MLA Zhu, Ziqiang,et al."Improved light emission from n-ZnO/p-Si heterojunction with HfO2as an electron blocking layer".Journal of Luminescence 184(2017).
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