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	High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets
	Wang, Xudong; Hu, Weida; Wang, Jianlu; Wang, Xianying; Liao, Lei; Zhu, Yuankun; Tian, Hongzheng
刊名	APPLIED PHYSICS LETTERS
	2017
卷号	110期号:4
ISSN号	0003-6951
DOI	10.1063/1.4975061
URL标识	查看原文
收录类别	SCIE ; EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3736935
专题	武汉大学
推荐引用方式 GB/T 7714	Wang, Xudong,Hu, Weida,Wang, Jianlu,et al. High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets[J]. APPLIED PHYSICS LETTERS,2017,110(4).
APA	Wang, Xudong.,Hu, Weida.,Wang, Jianlu.,Wang, Xianying.,Liao, Lei.,...&Tian, Hongzheng.(2017).High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets.APPLIED PHYSICS LETTERS,110(4).
MLA	Wang, Xudong,et al."High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets".APPLIED PHYSICS LETTERS 110.4(2017).

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