Temperature performance of the edge emitting transistor laser

	Temperature performance of the edge emitting transistor laser
	Liang S ; Zhu HL ; Kong DH ; Niu B ; Zhao LJ ; Wang W
刊名	applied physics letters
	2011
卷号	99 期号:1 页码:13503
关键词	HETEROSTRUCTURE LASER BIPOLAR-TRANSISTOR OPERATION INTEGRATION
ISSN号	0003-6951
通讯作者	liang, s (reprint author), chinese acad sci, inst semicond, key lab semicond mat, beijing 100083, peoples r china, liangsong@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china[60706009, 61006044, 60736036, 61021003]; national 973 program[2011cb301702]; national 863 project[2009aa03z442]
语种	英语
公开日期	2012-02-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22805]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Liang S,Zhu HL,Kong DH,et al. Temperature performance of the edge emitting transistor laser[J]. applied physics letters,2011,99(1):13503.
APA	Liang S,Zhu HL,Kong DH,Niu B,Zhao LJ,&Wang W.(2011).Temperature performance of the edge emitting transistor laser.applied physics letters,99(1),13503.
MLA	Liang S,et al."Temperature performance of the edge emitting transistor laser".applied physics letters 99.1(2011):13503.