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	Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility
	Yuan, Jun-Hui; Zhang, Biao; Song, Ya-Qian; Wang, Jia-Fu; Xue, Kan-Hao*; Miao, Xiang-Shui
刊名	JOURNAL OF MATERIALS SCIENCE
	2019
卷号	54期号:9页码:7035-7047
ISSN号	0022-2461
DOI	10.1007/s10853-019-03380-4
URL标识	查看原文
WOS记录号	WOS:000458655200024
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3384756
专题	武汉理工大学
作者单位	1.[Zhang, Biao 2.Xue, Kan-Hao 3.Yuan, Jun-Hui 4.Miao, Xiang-Shui 5.Song, Ya-Qian] Huazhong Univ Sci & Technol, Wuhan Natl Res Ctr Optoelect, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.
推荐引用方式 GB/T 7714	Yuan, Jun-Hui,Zhang, Biao,Song, Ya-Qian,et al. Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility[J]. JOURNAL OF MATERIALS SCIENCE,2019,54(9):7035-7047.
APA	Yuan, Jun-Hui,Zhang, Biao,Song, Ya-Qian,Wang, Jia-Fu,Xue, Kan-Hao*,&Miao, Xiang-Shui.(2019).Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility.JOURNAL OF MATERIALS SCIENCE,54(9),7035-7047.
MLA	Yuan, Jun-Hui,et al."Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility".JOURNAL OF MATERIALS SCIENCE 54.9(2019):7035-7047.

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