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	The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
	Zhou, Shengjun*; Liu, Xingtong; Yan, Han; Gao, Yilin; Xu, Haohao; Zhao, Jie; Quan, Zhijue; Gui, Chengqun; Liu, Sheng
刊名	SCIENTIFIC REPORTS
	2018
卷号	8期号:1页码:11053
ISSN号	2045-2322
DOI	10.1038/s41598-018-29440-4
URL标识	查看原文
WOS记录号	WOS:000439421600021;PMID:30038360
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3378891
专题	武汉理工大学
作者单位	1.[Gui, Chengqun 2.Liu, Sheng 3.Liu, Xingtong 4.Xu, Haohao 5.Gao, Yilin 6.Zhou, Shengjun 7.Zhao, Jie] Wuhan Univ, Sch Power & Mech Engn, Hubei Key Lab Accoutrement Tech Fluid Machinery &, Wuhan 430072, Peoples R China.
推荐引用方式 GB/T 7714	Zhou, Shengjun*,Liu, Xingtong,Yan, Han,et al. The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes[J]. SCIENTIFIC REPORTS,2018,8(1):11053.
APA	Zhou, Shengjun*.,Liu, Xingtong.,Yan, Han.,Gao, Yilin.,Xu, Haohao.,...&Liu, Sheng.(2018).The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes.SCIENTIFIC REPORTS,8(1),11053.
MLA	Zhou, Shengjun*,et al."The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes".SCIENTIFIC REPORTS 8.1(2018):11053.

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