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Giant Electric Energy Density in Epitaxial Lead‐Free Thin Films with Coexistence of Ferroelectrics and Antiferroelectrics
Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben
刊名Advanced Electronic Materials
2015
卷号1期号:5页码:-
关键词antiferroelectric energy storage morphotropic phase boundary pulsed laser deposition relaxor
ISSN号2199-160X
DOI10.1002/aelm.201500052
URL标识查看原文
WOS记录号WOS:000357655700009
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3365837
专题武汉理工大学
作者单位1.[Ke, Shanming
2.Ye, Mao
3.Zeng, Xierong
4.Peng, Biaolin] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen Engn Lab Adv Technol Ceram, Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China.
推荐引用方式
GB/T 7714
Peng, Biaolin,Zhang, Qi,Li, Xing,et al. Giant Electric Energy Density in Epitaxial Lead‐Free Thin Films with Coexistence of Ferroelectrics and Antiferroelectrics[J]. Advanced Electronic Materials,2015,1(5):-.
APA Peng, Biaolin.,Zhang, Qi.,Li, Xing.,Sun, Tieyu.,Fan, Huiqing.,...&Huang, Haitao.(2015).Giant Electric Energy Density in Epitaxial Lead‐Free Thin Films with Coexistence of Ferroelectrics and Antiferroelectrics.Advanced Electronic Materials,1(5),-.
MLA Peng, Biaolin,et al."Giant Electric Energy Density in Epitaxial Lead‐Free Thin Films with Coexistence of Ferroelectrics and Antiferroelectrics".Advanced Electronic Materials 1.5(2015):-.
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