Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation

	Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation
	Ning JQ ; Xu SJ ; Ruan XZ ; Ji Y ; Zheng HZ ; Sheng WD ; Liu HC
刊名	journal of applied physics
	2011
卷号	110 期号:5 页码:54320
关键词	WELLS RELAXATION HOLE PHOTOLUMINESCENCE SEMICONDUCTORS LOCALIZATION TRANSITIONS EXCITONS CARRIERS GROWTH
ISSN号	0021-8979
通讯作者	ning, jq (reprint author), univ hong kong, dept phys, pokfulam rd, hong kong, hong kong, peoples r china, sjxu@hkucc.hku.hk
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2012-01-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22679]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Ning JQ,Xu SJ,Ruan XZ,et al. Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation[J]. journal of applied physics,2011,110(5):54320.
APA	Ning JQ.,Xu SJ.,Ruan XZ.,Ji Y.,Zheng HZ.,...&Liu HC.(2011).Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation.journal of applied physics,110(5),54320.
MLA	Ning JQ,et al."Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation".journal of applied physics 110.5(2011):54320.