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	Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements
	Zhu, Zhi-Fu; Zhang, He-Qiu; Liang, Hong-Wei; Peng, Xin-Cun; Zou, Ji-Jun; Tang, Bin; Du, Guo-Tong
刊名	CHINESE PHYSICS LETTERS
	2017
卷号	34
ISSN号	0256-307X
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3311846
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China. 2.East China Inst Technol, Engn Res Ctr Nucl Technol Applicat, Minist Educ, Nanchang 330013, Jiangxi, Peoples R China. 3.East China Inst Technol, Jiangxi Prov Engn Res Ctr New Energy Technol & Eq, Minist Educ, Nanchang 330013, Jiangxi, Peoples R China. 4.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 5.East China Inst Technol, Engn Res Ctr Nucl Technol Applicat, Minist Educ, Nanchang 330013, Jiangxi, Peoples R China. 6.Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China. 7.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 8.Jilin Univ, Sch Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China.
推荐引用方式 GB/T 7714	Zhu, Zhi-Fu,Zhang, He-Qiu,Liang, Hong-Wei,et al. Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements[J]. CHINESE PHYSICS LETTERS,2017,34.
APA	Zhu, Zhi-Fu.,Zhang, He-Qiu.,Liang, Hong-Wei.,Peng, Xin-Cun.,Zou, Ji-Jun.,...&Du, Guo-Tong.(2017).Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements.CHINESE PHYSICS LETTERS,34.
MLA	Zhu, Zhi-Fu,et al."Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements".CHINESE PHYSICS LETTERS 34(2017).

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