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	Improved on-resistance and breakdown voltage vertical GaN-based field effect transistors
	Sun, Z.; Huang, H.; Shen, R.; Zhang, Z.; Liang, Y.C.; Hu, L.
	2017
会议名称	2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
页码	1101-1103
会议录	2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/3309990
专题	大连理工大学
作者单位	1.School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian, China 2.Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore 3.College of Mechanical and Electronic Engineering, Chaohu University, Hefei, China
推荐引用方式 GB/T 7714	Sun, Z.,Huang, H.,Shen, R.,et al. Improved on-resistance and breakdown voltage vertical GaN-based field effect transistors[C]. 见:2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings.

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