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	Theoretical study on electronic properties of MoS2 antidot lattices
	Shao, Li; Chen, Guangde; Ye, Honggang; Wu, Yelong; Niu, Haibo; Zhu, Youzhang
刊名	JOURNAL OF APPLIED PHYSICS
	2014
卷号	116期号:[db:dc_citation_issue]
ISSN号	0021-8979
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3303547
专题	西安交通大学
推荐引用方式 GB/T 7714	Shao, Li,Chen, Guangde,Ye, Honggang,et al. Theoretical study on electronic properties of MoS2 antidot lattices[J]. JOURNAL OF APPLIED PHYSICS,2014,116([db:dc_citation_issue]).
APA	Shao, Li,Chen, Guangde,Ye, Honggang,Wu, Yelong,Niu, Haibo,&Zhu, Youzhang.(2014).Theoretical study on electronic properties of MoS2 antidot lattices.JOURNAL OF APPLIED PHYSICS,116([db:dc_citation_issue]).
MLA	Shao, Li,et al."Theoretical study on electronic properties of MoS2 antidot lattices".JOURNAL OF APPLIED PHYSICS 116.[db:dc_citation_issue](2014).

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