| A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability | |
| Haipeng Zhang; Wang DJ(王德君) | |
| 刊名 | Journal of Semiconductors
 |
| 2018 | |
| 卷号 | 39页码:7400401-7400411 |
| URL标识 | 查看原文 |
| WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/3276567 |
| 专题 | 大连理工大学 |
| 推荐引用方式 GB/T 7714 | Haipeng Zhang,Wang DJ. A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability[J]. Journal of Semiconductors,2018,39:7400401-7400411. |
| APA | Haipeng Zhang,&Wang DJ.(2018).A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability.Journal of Semiconductors,39,7400401-7400411. |
| MLA | Haipeng Zhang,et al."A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability".Journal of Semiconductors 39(2018):7400401-7400411. |
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