Absorption of intense terahertz radiation in InAs/AlSb heterojunctions

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	Absorption of intense terahertz radiation in InAs/AlSb heterojunctions
	Cao, JC ; Lei, XL
刊名	COMMAD 2002 PROCEEDINGS
	2002
页码	471-474
关键词	BALANCE-EQUATION APPROACH HOT-ELECTRON TRANSPORT IMPACT IONIZATION SEMICONDUCTOR SUPERLATTICES FIELD OSCILLATORS FREQUENCY MINIBAND DRIVEN
通讯作者	Cao, JC, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Optics; Physics, Applied; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2011-12-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/37405]
专题	上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式 GB/T 7714	Cao, JC,Lei, XL. Absorption of intense terahertz radiation in InAs/AlSb heterojunctions[J]. COMMAD 2002 PROCEEDINGS,2002:471-474.
APA	Cao, JC,&Lei, XL.(2002).Absorption of intense terahertz radiation in InAs/AlSb heterojunctions.COMMAD 2002 PROCEEDINGS,471-474.
MLA	Cao, JC,et al."Absorption of intense terahertz radiation in InAs/AlSb heterojunctions".COMMAD 2002 PROCEEDINGS (2002):471-474.