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	Conduction mechanisms, dynamics and stability in ReRAMs
	Wang, Chen; Wu, Huaqiang; Gao, Bin; Zhang, Teng; Yang, Yuchao; Qian, He
刊名	MICROELECTRONIC ENGINEERING
	2018
卷号	187页码:121-133
关键词	ReRAM Conduction mechanisms Dynamics Stability
ISSN号	0167-9317
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3273832
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 2.Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China. 3.Peking Univ, Inst Microelect, Beijing 100871, Peoples R China.
推荐引用方式 GB/T 7714	Wang, Chen,Wu, Huaqiang,Gao, Bin,et al. Conduction mechanisms, dynamics and stability in ReRAMs[J]. MICROELECTRONIC ENGINEERING,2018,187:121-133.
APA	Wang, Chen,Wu, Huaqiang,Gao, Bin,Zhang, Teng,Yang, Yuchao,&Qian, He.(2018).Conduction mechanisms, dynamics and stability in ReRAMs.MICROELECTRONIC ENGINEERING,187,121-133.
MLA	Wang, Chen,et al."Conduction mechanisms, dynamics and stability in ReRAMs".MICROELECTRONIC ENGINEERING 187(2018):121-133.

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