Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope | |
Zheng, Xiantong; Huang, Wei; Liang, Hongwei; Wang, Ping; Liu, Yu; Chen, Zhaoying; Liang, Ping; Li, Mo; Zhang, Jian; Chen, Yonghai | |
刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
2018 | |
卷号 | 18页码:7468-7472 |
关键词 | InGaN Microplates mu-RDS |
ISSN号 | 1533-4880 |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3258788 |
专题 | 大连理工大学 |
作者单位 | 1.Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China. 2.Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. 3.Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 4.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China. 5.Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China. 6.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 7.Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. 8.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China. 9.Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 10.CAEP, Microsyst & Terahertz Res Ctr, 596 Yinhe Rd, Chengdu 610200, Sichuan, Peoples R China. |
推荐引用方式 GB/T 7714 | Zheng, Xiantong,Huang, Wei,Liang, Hongwei,et al. Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2018,18:7468-7472. |
APA | Zheng, Xiantong.,Huang, Wei.,Liang, Hongwei.,Wang, Ping.,Liu, Yu.,...&Wang, Xinqiang.(2018).Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,18,7468-7472. |
MLA | Zheng, Xiantong,et al."Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 18(2018):7468-7472. |
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