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	Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect
	Liu, Nanshu; Zhou, Si; Gao, Nan; Zhao, Jijun
刊名	PHYSICAL CHEMISTRY CHEMICAL PHYSICS
	2018
卷号	20页码:21732-21738
ISSN号	1463-9076
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3258069
专题	大连理工大学
作者单位	Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Nanshu,Zhou, Si,Gao, Nan,et al. Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2018,20:21732-21738.
APA	Liu, Nanshu,Zhou, Si,Gao, Nan,&Zhao, Jijun.(2018).Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,20,21732-21738.
MLA	Liu, Nanshu,et al."Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 20(2018):21732-21738.

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