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	Effect of excess Bi2O3 on structure and performance of ZnO-based thin film transistors
	Ye, Wei; Ren, Wei; Wang, Zhao; Shi, Peng; Yang, Shuming; Jing, Weixuan; Jiang, Zhuangde
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2015
卷号	33期号:[db:dc_citation_issue]
ISSN号	1071-1023
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3246345
专题	西安交通大学
推荐引用方式 GB/T 7714	Ye, Wei,Ren, Wei,Wang, Zhao,et al. Effect of excess Bi2O3 on structure and performance of ZnO-based thin film transistors[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2015,33([db:dc_citation_issue]).
APA	Ye, Wei.,Ren, Wei.,Wang, Zhao.,Shi, Peng.,Yang, Shuming.,...&Jiang, Zhuangde.(2015).Effect of excess Bi2O3 on structure and performance of ZnO-based thin film transistors.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,33([db:dc_citation_issue]).
MLA	Ye, Wei,et al."Effect of excess Bi2O3 on structure and performance of ZnO-based thin film transistors".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 33.[db:dc_citation_issue](2015).

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