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	Mechanism of electron multiplication due to charging for a SiO2 sample with a buried microstructure in SEM: A simulation analysis
	Wang, Fang; Feng, Guobao; Zhang, Xiusheng; Cao, Meng
刊名	MICRON
	2016
卷号	90期号:[db:dc_citation_issue]页码:64-70
关键词	Insulator charging Numerical simulation Surface potential Electron multiplication
ISSN号	0968-4328
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3231627
专题	西安交通大学
推荐引用方式 GB/T 7714	Wang, Fang,Feng, Guobao,Zhang, Xiusheng,et al. Mechanism of electron multiplication due to charging for a SiO2 sample with a buried microstructure in SEM: A simulation analysis[J]. MICRON,2016,90([db:dc_citation_issue]):64-70.
APA	Wang, Fang,Feng, Guobao,Zhang, Xiusheng,&Cao, Meng.(2016).Mechanism of electron multiplication due to charging for a SiO2 sample with a buried microstructure in SEM: A simulation analysis.MICRON,90([db:dc_citation_issue]),64-70.
MLA	Wang, Fang,et al."Mechanism of electron multiplication due to charging for a SiO2 sample with a buried microstructure in SEM: A simulation analysis".MICRON 90.[db:dc_citation_issue](2016):64-70.

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