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	Conductive metallic filaments dominate in hybrid perovskite-based memory devices
	Huang, Yang; Zhao, Zhenxuan; Wang, Chen; Fan, Hongbo; Yang, Yiming; Bian, Jiming; Wu, Huaqiang
刊名	SCIENCE CHINA-MATERIALS
	2019
卷号	62页码:1323-1331
关键词	Ag filament perovskite memory analog switch threshold switch resistance mechanism
ISSN号	2095-8226
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3229639
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China. 3.Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China. 4.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 5.Dalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Yang,Zhao, Zhenxuan,Wang, Chen,et al. Conductive metallic filaments dominate in hybrid perovskite-based memory devices[J]. SCIENCE CHINA-MATERIALS,2019,62:1323-1331.
APA	Huang, Yang.,Zhao, Zhenxuan.,Wang, Chen.,Fan, Hongbo.,Yang, Yiming.,...&Wu, Huaqiang.(2019).Conductive metallic filaments dominate in hybrid perovskite-based memory devices.SCIENCE CHINA-MATERIALS,62,1323-1331.
MLA	Huang, Yang,et al."Conductive metallic filaments dominate in hybrid perovskite-based memory devices".SCIENCE CHINA-MATERIALS 62(2019):1323-1331.

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