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	Evolution of intrinsic vacancies and prolonged lifetimes of vacancy clusters in black phosphorene
	Cai Yongqing; Chen Shuai; Gao Junfeng; Zhang Gang; Zhang Yong-Wei
刊名	Nanoscale
	2019
卷号	11页码:20987-20995
ISSN号	2040-3372
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3223174
专题	大连理工大学
作者单位	1.Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian, 116024, China. 2.Institute of High Performance Computing, A*STAR, Singapore 138732. zhangg@ihpc.a-star.edu.sg zhangyw@ihpc.a-star.edu.sg.
推荐引用方式 GB/T 7714	Cai Yongqing,Chen Shuai,Gao Junfeng,et al. Evolution of intrinsic vacancies and prolonged lifetimes of vacancy clusters in black phosphorene[J]. Nanoscale,2019,11:20987-20995.
APA	Cai Yongqing,Chen Shuai,Gao Junfeng,Zhang Gang,&Zhang Yong-Wei.(2019).Evolution of intrinsic vacancies and prolonged lifetimes of vacancy clusters in black phosphorene.Nanoscale,11,20987-20995.
MLA	Cai Yongqing,et al."Evolution of intrinsic vacancies and prolonged lifetimes of vacancy clusters in black phosphorene".Nanoscale 11(2019):20987-20995.

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