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	Catalyst-free growth of single crystalline beta-Ga2O3 microbelts on patterned sapphire substrates
	Feng, Qiuju; Li, Tongtong; Li, Fang; Li, Yunzheng; Shi, Bo; Gao, Chong; Wang, Deyu; Liang, Hongwei
刊名	JOURNAL OF CRYSTAL GROWTH
	2019
卷号	509页码:91-95
关键词	Low dimensional structures Characterization Chemical vapor deposition processes Semiconducting gallium compounds
ISSN号	0022-0248
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3221105
专题	大连理工大学
作者单位	1.Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China. 2.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Feng, Qiuju,Li, Tongtong,Li, Fang,et al. Catalyst-free growth of single crystalline beta-Ga2O3 microbelts on patterned sapphire substrates[J]. JOURNAL OF CRYSTAL GROWTH,2019,509:91-95.
APA	Feng, Qiuju.,Li, Tongtong.,Li, Fang.,Li, Yunzheng.,Shi, Bo.,...&Liang, Hongwei.(2019).Catalyst-free growth of single crystalline beta-Ga2O3 microbelts on patterned sapphire substrates.JOURNAL OF CRYSTAL GROWTH,509,91-95.
MLA	Feng, Qiuju,et al."Catalyst-free growth of single crystalline beta-Ga2O3 microbelts on patterned sapphire substrates".JOURNAL OF CRYSTAL GROWTH 509(2019):91-95.

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