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	Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate
	Lim, Way Foong; Quah, Hock Jin; Lu, Qifeng; Mu, Yifei; Ismail, Wan Azli Wan; Rahim, Bazura Abdul; Esa, Siti Rahmah; Kee, Yeh Yee; Zhao, Ce Zhou; Hassan, Zainuriah
刊名	APPLIED SURFACE SCIENCE
	2016
卷号	365期号:[db:dc_citation_issue]页码:296-305
关键词	Atomic layer deposition Time-of-Flight secondary ion mass Lanthanum doped zirconium oxide X-ray photoelectron spectroscopy Rapid thermal annealing spectrometry
ISSN号	0169-4332
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3219871
专题	西安交通大学
推荐引用方式 GB/T 7714	Lim, Way Foong,Quah, Hock Jin,Lu, Qifeng,et al. Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate[J]. APPLIED SURFACE SCIENCE,2016,365([db:dc_citation_issue]):296-305.
APA	Lim, Way Foong.,Quah, Hock Jin.,Lu, Qifeng.,Mu, Yifei.,Ismail, Wan Azli Wan.,...&Cheong, Kuan Yew.(2016).Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate.APPLIED SURFACE SCIENCE,365([db:dc_citation_issue]),296-305.
MLA	Lim, Way Foong,et al."Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate".APPLIED SURFACE SCIENCE 365.[db:dc_citation_issue](2016):296-305.

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