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	Preparation of high-quality CuGa2O4 film via annealing process of Cu/beta-Ga2O3
	Shi, Jianjun; Liang, Hongwei; Xia, Xiaochuan; Li, Zhuo; Long, Ze; Zhang, Heqiu; Liu, Yang
刊名	JOURNAL OF MATERIALS SCIENCE
	2019
卷号	54页码:11111-11116
关键词	Copper Copper compounds Crystallinity Film preparation Lattice mismatch Metallic films Semiconductor quantum wells Single crystals X ray diffraction analysis, Annealing methods Annealing process Epitaxial relationships Full width half maximum High resolution X ray diffraction Preferred orientations Single crystal substrates [110] direction, Gallium compounds
ISSN号	0022-2461
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3216984
专题	大连理工大学
作者单位	Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Shi, Jianjun,Liang, Hongwei,Xia, Xiaochuan,et al. Preparation of high-quality CuGa2O4 film via annealing process of Cu/beta-Ga2O3[J]. JOURNAL OF MATERIALS SCIENCE,2019,54:11111-11116.
APA	Shi, Jianjun.,Liang, Hongwei.,Xia, Xiaochuan.,Li, Zhuo.,Long, Ze.,...&Liu, Yang.(2019).Preparation of high-quality CuGa2O4 film via annealing process of Cu/beta-Ga2O3.JOURNAL OF MATERIALS SCIENCE,54,11111-11116.
MLA	Shi, Jianjun,et al."Preparation of high-quality CuGa2O4 film via annealing process of Cu/beta-Ga2O3".JOURNAL OF MATERIALS SCIENCE 54(2019):11111-11116.

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