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	Effects of substrate temperature on ZnO-TFT based on Bi1.5Zn1.0Nb1.5O7 insulating layer
	Ye, Wei; Ren, Wei; Shi, Peng
刊名	Bandaoti Guangdian/Semiconductor Optoelectronics
	2016
卷号	37期号:[db:dc_citation_issue]页码:331-337
关键词	Pyrochlore BZN films RF magnetron sputtering Sub-threshold swing Surface state density ZnO-TFT
ISSN号	1001-5868
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3215444
专题	西安交通大学
推荐引用方式 GB/T 7714	Ye, Wei,Ren, Wei,Shi, Peng. Effects of substrate temperature on ZnO-TFT based on Bi1.5Zn1.0Nb1.5O7 insulating layer[J]. Bandaoti Guangdian/Semiconductor Optoelectronics,2016,37([db:dc_citation_issue]):331-337.
APA	Ye, Wei,Ren, Wei,&Shi, Peng.(2016).Effects of substrate temperature on ZnO-TFT based on Bi1.5Zn1.0Nb1.5O7 insulating layer.Bandaoti Guangdian/Semiconductor Optoelectronics,37([db:dc_citation_issue]),331-337.
MLA	Ye, Wei,et al."Effects of substrate temperature on ZnO-TFT based on Bi1.5Zn1.0Nb1.5O7 insulating layer".Bandaoti Guangdian/Semiconductor Optoelectronics 37.[db:dc_citation_issue](2016):331-337.

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