Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device | |
Hu, Borong[1]; Gonzalez, Jose Ortiz[2]; Ran, Li[1,2]; Ren, Hai[1]; Zeng, Zheng[1]; Lai, Wei[1]; Gao, Bing[1]; Alatise, Olayiwola[2]; Lu, Hua[3]; Bailey, Christopher[3] | |
2017 | |
卷号 | 17页码:727-737 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2978251 |
专题 | 重庆大学 |
推荐引用方式 GB/T 7714 | Hu, Borong[1],Gonzalez, Jose Ortiz[2],Ran, Li[1,2],et al. Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device[J],2017,17:727-737. |
APA | Hu, Borong[1].,Gonzalez, Jose Ortiz[2].,Ran, Li[1,2].,Ren, Hai[1].,Zeng, Zheng[1].,...&Mawby, Phil[2].(2017).Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device.,17,727-737. |
MLA | Hu, Borong[1],et al."Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device".17(2017):727-737. |
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