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	Improving breakdown, conductive, and thermal performances for SOI high voltage LDMOS using a partial compound buried layer
	Hu, Shengdong[1,2]; Luo, Jun[2]; Jiang, YuYu[1]; Cheng, Kun[1]; Chen, Yinhui[1]; Jin, Jingjing[1]; Wang, Jian'an[2]; Zhou, Jianlin[1]; Tang, Fang[1]; Zhou, Xichuan[1]
	2016
卷号	117页码:146-151
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2970786
专题	重庆大学
推荐引用方式 GB/T 7714	Hu, Shengdong[1,2],Luo, Jun[2],Jiang, YuYu[1],et al. Improving breakdown, conductive, and thermal performances for SOI high voltage LDMOS using a partial compound buried layer[J],2016,117:146-151.
APA	Hu, Shengdong[1,2].,Luo, Jun[2].,Jiang, YuYu[1].,Cheng, Kun[1].,Chen, Yinhui[1].,...&Gan, Ping[1].(2016).Improving breakdown, conductive, and thermal performances for SOI high voltage LDMOS using a partial compound buried layer.,117,146-151.
MLA	Hu, Shengdong[1,2],et al."Improving breakdown, conductive, and thermal performances for SOI high voltage LDMOS using a partial compound buried layer".117(2016):146-151.

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