Analysis of diamond pseudo-vertical Schottky barrier diode through patterning tungsten growth method | |
Zhao, Dan; Liu, Zhangcheng; Zhang, Xiaofan; Zhang, Minghui; Wang, Yanfeng; Shao, Guoqing; Zhang, Jingwen; Fan, Shuwei; Wang, Wei; Wang, Hongxing | |
刊名 | APPLIED PHYSICS LETTERS
![]() |
2018 | |
卷号 | 112 |
ISSN号 | 0003-6951 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2922392 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Zhao, Dan,Liu, Zhangcheng,Zhang, Xiaofan,et al. Analysis of diamond pseudo-vertical Schottky barrier diode through patterning tungsten growth method[J]. APPLIED PHYSICS LETTERS,2018,112. |
APA | Zhao, Dan.,Liu, Zhangcheng.,Zhang, Xiaofan.,Zhang, Minghui.,Wang, Yanfeng.,...&Wang, Hongxing.(2018).Analysis of diamond pseudo-vertical Schottky barrier diode through patterning tungsten growth method.APPLIED PHYSICS LETTERS,112. |
MLA | Zhao, Dan,et al."Analysis of diamond pseudo-vertical Schottky barrier diode through patterning tungsten growth method".APPLIED PHYSICS LETTERS 112(2018). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论