Electronic States of a Shallow Hydrogenic Donor Impurity in Different Shaped Semiconductor Quantum Wells

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	Electronic States of a Shallow Hydrogenic Donor Impurity in Different Shaped Semiconductor Quantum Wells
	Jiang, LM ; Wang, HL ; Wu, HT ; Gong, Q ; Feng, SL
刊名	COMMUNICATIONS IN THEORETICAL PHYSICS
	2009-01-01
卷号	51 期号:6 页码:1135-1138
关键词	BINDING-ENERGY MAGNETIC-FIELD NANOSTRUCTURES
ISSN号	0253-6102
通讯作者	Wang, HL, Qufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2011-11-03
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/11175]
专题	上海微系统与信息技术研究所_无线、宽带、通讯技术_期刊论文
推荐引用方式 GB/T 7714	Jiang, LM,Wang, HL,Wu, HT,et al. Electronic States of a Shallow Hydrogenic Donor Impurity in Different Shaped Semiconductor Quantum Wells[J]. COMMUNICATIONS IN THEORETICAL PHYSICS,2009,51(6):1135-1138.
APA	Jiang, LM,Wang, HL,Wu, HT,Gong, Q,&Feng, SL.(2009).Electronic States of a Shallow Hydrogenic Donor Impurity in Different Shaped Semiconductor Quantum Wells.COMMUNICATIONS IN THEORETICAL PHYSICS,51(6),1135-1138.
MLA	Jiang, LM,et al."Electronic States of a Shallow Hydrogenic Donor Impurity in Different Shaped Semiconductor Quantum Wells".COMMUNICATIONS IN THEORETICAL PHYSICS 51.6(2009):1135-1138.