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	Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance
	Wan, Da; Liu, Xingqiang; Abliz, Ablat; Liu, Chuansheng; Yang, Yanbing; Wu, Wei; Li, Guoli; Li, Jinchai; Chen, Huipeng; Guo, Tailiang
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2018
卷号	65页码:1018-1022
关键词	tungsten (W)-doping pulsed current-voltage (I-V) solution processed Indium zinc oxide (IZO) thin-film transistors (TFTs)
ISSN号	0018-9383
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2891274
专题	福州大学
推荐引用方式 GB/T 7714	Wan, Da,Liu, Xingqiang,Abliz, Ablat,et al. Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65:1018-1022.
APA	Wan, Da.,Liu, Xingqiang.,Abliz, Ablat.,Liu, Chuansheng.,Yang, Yanbing.,...&Liao, Lei.(2018).Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance.IEEE TRANSACTIONS ON ELECTRON DEVICES,65,1018-1022.
MLA	Wan, Da,et al."Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance".IEEE TRANSACTIONS ON ELECTRON DEVICES 65(2018):1018-1022.

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