A 2-4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High Efficiency | |
Wang HQ(王浩全); Guo H(郭昊); Chen CQ(陈春青) | |
刊名 | Progress In Electromagnetics Research Letters |
2016-09-29 | |
文献子类 | 期刊论文 |
英文摘要 | In this paper, a broadband power amplifier with high efficiency and output power based on GaN HEMT is presented. The design of broadband matching network, transistor package modeling is presented and a simulation strategy is proposed to increase the simulation accuracy. According to measured results, the PA module shows a linear gain of 10~13 dB during 1.9-4 GHz, the efficiency can reach 74.5% and the maximum output power reaches 33.2 Watt. For a 5-MHz WCDMA signal, the designed power |
内容类型 | 期刊论文 |
源URL | [http://159.226.55.106/handle/172511/16158] |
专题 | 微电子研究所_健康电子研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | Wang HQ,Guo H,Chen CQ. A 2-4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High Efficiency[J]. Progress In Electromagnetics Research Letters,2016. |
APA | Wang HQ,Guo H,&Chen CQ.(2016).A 2-4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High Efficiency.Progress In Electromagnetics Research Letters. |
MLA | Wang HQ,et al."A 2-4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High Efficiency".Progress In Electromagnetics Research Letters (2016). |
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