A 2-4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High Efficiency
Wang HQ(王浩全); Guo H(郭昊); Chen CQ(陈春青)
刊名Progress In Electromagnetics Research Letters
2016-09-29
文献子类期刊论文
英文摘要

In this paper, a broadband power amplifier with high efficiency and output power based on GaN HEMT is presented. The design of broadband matching network, transistor package modeling is presented and a simulation strategy is proposed to increase the simulation accuracy. According to measured results, the PA module shows a linear gain of 10~13 dB during 1.9-4 GHz, the efficiency can reach 74.5% and the maximum output power reaches 33.2 Watt. For a 5-MHz WCDMA signal, the designed power

内容类型期刊论文
源URL[http://159.226.55.106/handle/172511/16158]  
专题微电子研究所_健康电子研发中心
作者单位中国科学院微电子研究所
推荐引用方式
GB/T 7714
Wang HQ,Guo H,Chen CQ. A 2-4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High Efficiency[J]. Progress In Electromagnetics Research Letters,2016.
APA Wang HQ,Guo H,&Chen CQ.(2016).A 2-4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High Efficiency.Progress In Electromagnetics Research Letters.
MLA Wang HQ,et al."A 2-4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High Efficiency".Progress In Electromagnetics Research Letters (2016).
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