In-memory Direct Processing based on Nanoscale Perpendicular Magnetic Tunnel Junctions

	In-memory Direct Processing based on Nanoscale Perpendicular Magnetic Tunnel Junctions
	Wei JQ(魏家琦); Cui HS(崔虎山); He XB(贺晓彬); Li JJ(李俊杰); Zhao C(赵超); Weisheng Zhao; Cao KH(曹凯华); Wenlong Cai; Yizheng liu; Huisong Li
刊名	Nanoscale
	2018-10-22
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/19199]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Wei JQ,Cui HS,He XB,et al. In-memory Direct Processing based on Nanoscale Perpendicular Magnetic Tunnel Junctions[J]. Nanoscale,2018.
APA	Wei JQ.,Cui HS.,He XB.,Li JJ.,Zhao C.,...&Huisong Li.(2018).In-memory Direct Processing based on Nanoscale Perpendicular Magnetic Tunnel Junctions.Nanoscale.
MLA	Wei JQ,et al."In-memory Direct Processing based on Nanoscale Perpendicular Magnetic Tunnel Junctions".Nanoscale (2018).