半导体器件及其制造方法 | |
殷华湘![]() ![]() | |
2016-04-12 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US9312187 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | The present invention discloses a semiconductor device, comprising a first MOSFET; a second MOSFET; a first stress liner covering the first MOSFET and having a first stress; a second stress liner covering the second MOSFET and having a second stress; wherein the second stress liner and/or the first stress liner comprise(s) a metal oxide. In accordance with the high-stress CMOS and method of manufacturing the same of the present invention, a stress layer comprising a metal oxide is formed selectively on PMOS and NMOS respectively by using a CMOS compatible process, whereby carrier mobility of the channel region is effectively enhanced and the performance of the device is improved. |
公开日期 | 2013-10-03 |
申请日期 | 2012-04-11 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.106/handle/172511/16684] ![]() |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 殷华湘,马小龙,徐秋霞,等. 半导体器件及其制造方法. US9312187. 2016-04-12. |
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