Novel top-down fabrication of Si-based nanostructures with sub-20nm scale

	Novel top-down fabrication of Si-based nanostructures with sub-20nm scale
	Meng LK(孟令款); Yan J(闫江)
刊名	IEEE 13th International Conference on Solid-State and Integrated Circuit Technology
	2016-10-31
文献子类	期刊论文
英文摘要	In this work, we present an attractive and innovative fabrication technique that can produce highly-controlled silicon-based nanostructures in wafer-scale by a seldom used material in IC fabrication, amorphous silicon (α-Si), as an etch mask. SiO2 nanostructures directly fabricated can be served as nanotemplates to transfer into the underlying substrates such as silicon, germanium, transistor gate or other dielectric materials to form electrically functional nanostructures and devices.
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/16219]
专题	微电子研究所_集成电路先导工艺研发中心
推荐引用方式 GB/T 7714	Meng LK,Yan J. Novel top-down fabrication of Si-based nanostructures with sub-20nm scale[J]. IEEE 13th International Conference on Solid-State and Integrated Circuit Technology,2016.
APA	孟令款,&闫江.(2016).Novel top-down fabrication of Si-based nanostructures with sub-20nm scale.IEEE 13th International Conference on Solid-State and Integrated Circuit Technology.
MLA	孟令款,et al."Novel top-down fabrication of Si-based nanostructures with sub-20nm scale".IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (2016).