A Novel Nanofabrication Technique of Silicon-Based Nanostructures

	A Novel Nanofabrication Technique of Silicon-Based Nanostructures
	Meng LK(孟令款); He XB(贺晓彬); Gao JF(高建峰); Li JJ(李俊杰)
刊名	Nanoscale Research Letters
	2016-11-15
文献子类	期刊论文
英文摘要	A novel nanofabrication technique which can produce highly controlled silicon-based nanostructures in wafer scale has been proposed using a simple amorphous silicon (α-Si) material as an etch mask. SiO2 nanostructures directly fabricated can serve as nanotemplates to transfer into the underlying substrates such as silicon, germanium, transistor gate, or other dielectric materials to form electrically functional nanostructures and devices. In this paper
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/16217]
专题	微电子研究所_集成电路先导工艺研发中心
推荐引用方式 GB/T 7714	Meng LK,He XB,Gao JF,et al. A Novel Nanofabrication Technique of Silicon-Based Nanostructures[J]. Nanoscale Research Letters,2016.
APA	孟令款,贺晓彬,高建峰,&李俊杰.(2016).A Novel Nanofabrication Technique of Silicon-Based Nanostructures.Nanoscale Research Letters.
MLA	孟令款,et al."A Novel Nanofabrication Technique of Silicon-Based Nanostructures".Nanoscale Research Letters (2016).