Thermal atomic layer deposition of TaAlC with TaCl5 and TMA as precursors

	Thermal atomic layer deposition of TaAlC with TaCl5 and TMA as precursors
	Xiang JJ(项金娟); Li TT(李亭亭); Wang XL(王晓磊); Wang WW(王文武); Li JF(李俊峰)
刊名	ECS Journal of Solid State Science and Technology
	2016-05-01
文献子类	期刊论文
英文摘要	Metal gate TaAlC film was grown by thermal atomic layer deposition (ALD) technique using tantalum pentachloride (TaCl5)and trimethylaluminum (TMA) as precursors. The effects of growth temperature on the physical and electrical characteristics were estimated by X-ray photoemission spectroscopy,X-ray reflectivity,Grazing incidentX-ray diffraction and metal-oxide-semiconductor (MOS) capacitor structure, respectively.
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/16210]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Xiang JJ,Li TT,Wang XL,et al. Thermal atomic layer deposition of TaAlC with TaCl5 and TMA as precursors[J]. ECS Journal of Solid State Science and Technology,2016.
APA	Xiang JJ,Li TT,Wang XL,Wang WW,&Li JF.(2016).Thermal atomic layer deposition of TaAlC with TaCl5 and TMA as precursors.ECS Journal of Solid State Science and Technology.
MLA	Xiang JJ,et al."Thermal atomic layer deposition of TaAlC with TaCl5 and TMA as precursors".ECS Journal of Solid State Science and Technology (2016).