Strained-Si0.73Ge0.27 channels are successfully integrated with high-？？/metal gates in p-type metal-oxide- semiconductor field effect transistors (pMOSFETs) using the replacement post-gate process. A silicon cap and oxide inter layers are inserted between Si0.73Ge0.27 and high-dielectric to improve the interface. The fabricated Si0.73Ge0.27 pMOSFETs with gate length of 30nm exhibit good performance with high drive current (～428 A/m at DD = 1 V) and suppressed short-channel effects.