化学机械平坦化方法和后金属栅的制作方法 | |
杨涛; 刘金彪; 贺晓彬; 赵超; 陈大鹏 | |
2012-08-28 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US8252689 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | The present invention provides a chemical-mechanical planarization method. The chemical-mechanical planarization method includes: providing a substrate including a gate and source/drain regions on the sides of the gate, the gate and the source/drain regions being overlay by an insulating layer, and the insulating layer including a protruding part above the gate and a recessed part above a surface of the substrate between gates; selectively doping the insulating layer such that only the protruding part is doped; and performing CMP on the substrate after doping, to remove the protruding part and planarize the surface of the substrate. By selectively doping the insulating layer, the method makes only the protruding part of the insulating layer doped, enhancing the corrosive attacks on the material of the protruding part by the slurry in the CMP, and increasing the removal rate of the material of the protruding part by the CMP. |
公开日期 | 2012-06-07 |
申请日期 | 2011-04-12 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.106/handle/172511/15858] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 杨涛,刘金彪,贺晓彬,等. 化学机械平坦化方法和后金属栅的制作方法. US8252689. 2012-08-28. |
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