Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance

	Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance
	Zhao YY(赵玉印); He XB(贺晓彬); Gao JF(高建峰); Xu Q(徐强); Li JJ(李俊杰); Hong PZ(洪培真); Meng LK(孟令款); Li CL(李春龙); Liu JB(刘金彪); Jia C(贾宬)
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2015-03-18
公开日期	2016-05-31
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/15031]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Zhao YY,He XB,Gao JF,et al. Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2015.
APA	Zhao YY.,He XB.,Gao JF.,Xu Q.,Li JJ.,...&Zhang YB.(2015).Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance.IEEE TRANSACTIONS ON ELECTRON DEVICES.
MLA	Zhao YY,et al."Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance".IEEE TRANSACTIONS ON ELECTRON DEVICES (2015).